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Cote d'Ivoire LGS

Gallium silicate lanthanum crystal (LGS) is a kind of multifunctional crystal with excellent performance. The dielectric, elastic and piezoelectric constants of LGS crystal are obviously higher than those of quartz, and the electromechanical coupling coefficient of LGS crystal is 2-3 times that of quartz, which can be used to manufacture surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices.

Product Description

LGS

Gallium silicate lanthanum crystal (LGS) is a kind of multifunctional crystal with excellent performance. The dielectric, elastic and piezoelectric constants of LGS crystal are obviously higher than those of quartz, and the electromechanical coupling coefficient of LGS crystal is 2-3 times that of quartz, which can be used to manufacture surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices.

Product Description:

Gallium silicate lanthanum crystal (LGS) is a kind of multifunctional crystal with excellent performance. The dielectric, elastic and piezoelectric constants of LGS crystal are obviously higher than those of quartz, and the electromechanical coupling coefficient of LGS crystal is 2-3 times that of quartz, which can be used to manufacture surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. At the same time, LGS crystal can be used to make electro-optic Q switch, the effect is comparable to that of DKDP crystal Q switch. The devices based on LGS crystal have high thermal stability.

Main Characteristic:

Good thermal stability

Low equivalent series resistance

Electromechanical coupling coefficient (2~3 times of quartz)

 

Chemical Formula

La3Ga5SiO14

Crystalline Structure

Trigonal system

Growth Method

Czochralski

Rigidity

6.6Mohs

Density

5.754g/cmm³

Melting Point

1470℃

Dielectric Constant

ε11=18.27;ε33=55.26

Thermal Expansion Coefficient

α11=5.15×10-6k-1α33=3.65×10-6k-1

Electro-mechanical Coupling factor K(%)

0.28~0.46

Piezoelectric Strain Constant

d11=6.3;d14=-5.4

 

Diameter Tolerance

+0/-0.05mm

Length Tolerance

±0.1mm

Cut Direction

±0.2°

Depth of Parallelism

<30"

Side Of The Vertical

<15'

Flatness

<λ/10@633nm

Chamfer

<0.1*45°

Surface Finish

10/5